Choosing a High-voltage Oscilloscope Probe for SiC/GaN Power Semiconductor Device Measurements

Figure 1: Wide-bandgap (GaN) power semiconductor device
waveforms captured using two, different probe topologies.
Click on any image to expand.

In our last post, we introduced you to a new tool on the Teledyne LeCroy website: The High-voltage Probe Selection Guide. To demonstrate the benefits of the guide, let’s explore further what must be considered when choosing an HV oscilloscope probe for power semiconductor device measurements.

Why are power semiconductor device measurements challenging?