Choosing a High-voltage Oscilloscope Probe for SiC/GaN Power Semiconductor Device Measurements

Figure 1: Wide-bandgap (GaN) power semiconductor device
waveforms captured using two, different probe topologies.
Click on any image to expand.

In our last post, we introduced you to a new tool on the Teledyne LeCroy website: The High-voltage Probe Selection Guide. To demonstrate the benefits of the guide, let’s explore further what must be considered when choosing an HV oscilloscope probe for power semiconductor device measurements.

Why are power semiconductor device measurements challenging?

How to Choose the Best High-voltage Oscilloscope Probe in 5 Minutes

Figure 1: The High-voltage Probe Selection Guide
color codes better or worse probe selections based on
your answers to three, simple questions.
Click any image to enlarge.

Probing high-voltage (HV) circuits for analysis with an oscilloscope presents unique challenges due to the potential for injury or equipment damage, as well as the demands of the materials used in HV semiconductors. HV floating measurements are extremely dangerous and difficult to make. Conventional passive probes are not the answer, but isolated and high-voltage differential probes are options. Yet, with many possible choices in these categories, how can you decide which is actually the best HV oscilloscope probe for your application?

Teledyne LeCroy offers this new, easy way to help you select a high-voltage oscilloscope probe based on your specific application—the High-voltage Probe Selection Guide—available on the Teledyne LeCroy website at: teledynelecroy.com/powerprobes