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| Figure 1: Wide-bandgap (GaN) power semiconductor device waveforms captured using two, different probe topologies. Click on any image to expand. |
Why are power semiconductor device measurements challenging?
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| Figure 1: Wide-bandgap (GaN) power semiconductor device waveforms captured using two, different probe topologies. Click on any image to expand. |
Why are power semiconductor device measurements challenging?
| Figure 1: The High-voltage Probe Selection Guide color codes better or worse probe selections based on your answers to three, simple questions. Click any image to enlarge. |
Teledyne LeCroy offers this new, easy way to help you select a high-voltage oscilloscope probe based on your specific application—the High-voltage Probe Selection Guide—available on the Teledyne LeCroy website at: teledynelecroy.com/powerprobes
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| Figure 1: IoTs include SOCs, DDR, DPM ICs, wireless, and MCUs |
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| Figure 1: Your scope's vertical adjust has its limits |
| Figure 1: Active oscilloscope probes sport high resistance and low capacitance at their tips, but terminate into a scope's 50Ω input. |
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Figure 1: An example of an active
oscilloscope probe
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